| 摘要 |
The present invention relates to a structure of a static random access memory (SRAM) having an asymmetric silicide layer and a method for manufacturing the same. The method for manufacturing a static random access memory (SRAM) having an asymmetric silicide layer, wherein the SRAM is provided with transfer transistors and actuating transistors, the method including the steps of: preparing a semiconductor substrate provided with a low structure of a predetermined configuration; forming gate electrodes of the transfer transistors and the actuating transistors on the semiconductor substrate with being spaced by a predetermined distance; forming spacers on side walls of the transfer transistors and the actuating transistors; forming the transfer transistors implanting impurities into a portion of the semiconductor substrate between the gate electrodes and source/drains of the actuating transistors; forming a silicide blocking layer on a top of regions of the transfer transistors; and forming a silicide layer on a top of gate electrodes of the actuating transistors and a surface of source/drain electrodes.
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