Photovoltaische Vorrichtung, photoelektrischer Wandler und Verfahren zu deren Herstellung

摘要

A photovoltaic device and a photoelectric transducer having a pin-structure semiconductor layer formed by superposing a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer wherein the i-type semiconductor layer comprises a non-single crystal semiconductor and average grain size distribution of crystal grains of the i-type semiconductor layer is not uniform are provided. Methods of manufacturing the photovoltaic device and the photoelectric transducer are also provided. The manufacturing methods according to the invention can produce photovoltaic devices and photoelectric transducers having an excellent photoelectric conversion efficiency and a remarkable optical stability at an enhanced rate and at low cost.