Semiconductor device forming method e.g. for embedded memory, involves forming single layer spacer on side walls of conductive pattern by etching one spacer layer using another spacer as mask

摘要

A spacer layer (70) formed between the adjacent conductive patterns (55) comprising bit line (50) and capping layer (60) is etched through interlayer insulation film (20) and another spacer layer (80) is used as mask to form single layer spacer on side walls of conductive patterns. Independent claims are also included for the following: (1) semiconductor memory formation method; (2) semiconductor device; and (3) semiconductor memory.