| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photovoltaic element in which output characteristics are enhanced. <P>SOLUTION: An i-type amorphous silicon film 2 and a p-type amorphous silicon film 3 are formed sequentially on the major surface of an n-type single crystal silicon substrate 1. A surface electrode 4 is formed on the p-type amorphous silicon film 3 and a comb-type current collecting electrode 5 is formed on the surface electrode 4. An i-type amorphous silicon film 6 and an n-type amorphous silicon film 7 are formed sequentially on the rear surface of the n-type single crystal silicon substrate 1. A rear surface electrode 8 is formed on the n-type amorphous silicon film 7 and a comb-type current collecting electrode 9 is formed on the rear surface electrode 8. The i-type amorphous silicon film 6 has a two layer structure of an i-layer 61 on the n-type single crystal silicon substrate 1 side and an i-layer 62 on the n-type amorphous silicon film 7 side. The i-layer 62 has an optical gap smaller than that of the i-layer 61. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
