发明名称 |
Method to reduce photoresist mask line dimensions |
摘要 |
A method for reducing the dimension of a patterned organic photoresist area by reducing the pressure of a reactive environment surrounding the patterned photoresist to cause outgasing. The outgased materials CxHyOz are then decomposed in the reactive environment leaving the outgased photoresist porous. The environment surrounding the patterned photoresist is then increased to atmospheric pressure, which compresses or shrinks the porous photoresist. Photoresist lines having a dimension as small as about 0.085 mum can be obtained.
|
申请公布号 |
US2004209480(A1) |
申请公布日期 |
2004.10.21 |
申请号 |
US20030417704 |
申请日期 |
2003.04.17 |
申请人 |
SU YIH-CHEN;TSAI CHAO-TZUNG |
发明人 |
SU YIH-CHEN;TSAI CHAO-TZUNG |
分类号 |
G03F7/40;H01L21/027;H01L21/033;H01L21/28;H01L21/3065;H01L21/308;H01L21/311;H01L21/3213;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
G03F7/40 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|