| 发明名称 |
Dense arrays and charge storage devices |
| 摘要 |
There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
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| 申请公布号 |
US2004206996(A1) |
申请公布日期 |
2004.10.21 |
| 申请号 |
US20040842008 |
申请日期 |
2004.05.10 |
| 申请人 |
MATRIX SEMICONDUCTOR, INC. |
发明人 |
LEE THOMAS H.;SUBRAMANIAN VIVEK;CLEEVES JAMES M.;WALKER ANDREW J.;PETTI CHRISTOPHER J.;KOUZNETZOV IGOR G.;JOHNSON MARK G.;FARMWALD PAUL MICHAEL;HERNER BRAD |
| 分类号 |
H01L21/20;H01L21/336;H01L21/822;H01L21/8246;H01L21/8247;H01L27/06;H01L27/10;H01L27/112;H01L27/115;H01L27/12;H01L29/423;H01L29/786;H01L29/788;H01L29/792;H01L29/861;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/20 |
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