发明名称 METHOD AND SYSTEM FOR FORMING RESIST PATTERN, AND HEAT TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To prevent the resist surface of a developed resist pattern from getting forward tapered or reversely tapered (T-top) in shape, and to make the resist shape of the developed resist pattern rectangular so as to improve the resist shape of the developed resist pattern in controllability. SOLUTION: A resist pattern forming system 100 is equipped with a coating device 10 for coating a processed film on a substrate with a photoresist solution containing a development promotor, a thermal treatment device 20 for forming a photoresist layer by thermally treating the applied photoresist solution in an atmosphere containing a development promotor, and an exposure system 30 which subjects the prescribed region of the photoresist layer formed through a thermal treatment to an exposure process. The thermal treatment device 20 thermally treats the resist layer subjected to an exposure process, and furthermore the resist pattern forming system is equipped with a developing processor 40 which subjects the photoresist layer which has been thermally treated and exposed to an exposure process to development processing to form a resist pattern. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004296838(A) 申请公布日期 2004.10.21
申请号 JP20030088004 申请日期 2003.03.27
申请人 SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC 发明人 MITSUYOSHI YASURO
分类号 G03F7/38;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/38
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