| 摘要 |
MTJ elements are accumulated in a plurality of portions on a semiconductor substrate. Upper lines and lower lines extending in the X direction are connected to the MTJ elements. The number of MTJ elements arranged in each portion is gradually increased from a lower portion towards an upper portion. With respect to the upper lines, the upper lines arranged in the lower portion are connected to transistors present near an array of the MTJ elements, and the upper lines arranged in the upper portion are connected to transistors distant from the array of the MTJ elements. Also with respect to the lower lines, the lower lines in the lower portion are connected to transistors nearer to the array of the TRM elements than the lower lines in the upper portion.
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