Hall element made using semiconductor technology for use in integrated circuits formed of first and second semiconductor regions in a recess

摘要

The Hall element has a first semiconductor region having Hall sensitivity and being of a first conductive type. A recess is provided and formed of a second conductive type different from the first. The first semiconductor region is embedded in the recess. A second semiconductor region of the first conductive type is also embedded in the recess. Preferably the first region has two Hall voltage connectors as control parameter contacts to which is applied a variable control parameter and two secondary side contacts as measurement parameter contacts. Independent claims also cover a method of making and a method of operating such a Hall element.