METHOD AND APPARATUS TO FORM A PLANARIZED CU INTERCONNECT LAYER USING ELECTROLESS MEMBRANE DEPOSITION
摘要
A planarized conductive material is formed over a substrate including narrow and wide features. The conductive material is formed through a succession of deposition processes. A first deposition process forms a first layer of the conductive material that fills the narrow features and at least partially fills the wide features. A second deposition process forms a second layer of the conductive material within cavities in the first layer. A flexible material can reduce a thickness of the first layer above the substrate while delivering a solution to the cavities to form the second layer therein. The flexible material can be a porous membrane attached to a pressurizable reservoir filled with the solution. The flexible material can also be a poromeric material wetted with the solution.
申请公布号
WO2004088746(A2)
申请公布日期
2004.10.14
申请号
WO2004US08945
申请日期
2004.03.23
申请人
LAM RESEARCH CORPORATION;REDEKER, FRED C.;BOYD, JOHN