MAGNETIC MEMORY CELL, MAGNETIC MEMORY DEVICE, AND MAGNETIC MEMORY DEVICE MANUFACTURING METHOD

摘要

A magnetic memory device in which information is written stably by reducing the loss of the magnetic field induced by the current flowing through a write line, a magnetic memory cell incorporated in the magnetic memory device, and a method for easily manufacturing such a magnetic memory device are disclosed. The magnetic memory cell comprises multilayer bodies and an annular magnetic layer. Each multilayer body includes a magnetosensitive layer in which the direction of magnetization varies with the external magnetic field. In the multilayer body, current flows perpendicularly to the multilayer surface. The annular magnetic layer is disposed between a first multilayer body and a second multilayer body. The axis of the annular magnetic layer is parallel to the multilayer surface. Conductive wires are passed through the annular magnetic layer along the axis. Degradation of the strength of the reflux magnetic field generated in the annular magnetic layer can be suppressed. Consequently, the magnetization reversal of the magnetosensitive layers of the first and second multilayer bodies can be effected by a less write current.