METHOD FOR FORMING SEMICONDUCTOR DEVICE TO PREVENT LIFTING BETWEEN DIELECTRIC FILM AND UPPER ELECTRODE

摘要

PURPOSE: A method for forming a semiconductor device is provided to previously prevent lifting between a dielectric film and an upper electrode by exposing an overlap mark block using a mask with a clear box. CONSTITUTION: A lower electrode of a capacitor is formed on a semiconductor substrate. A dielectric film and an upper electrode are sequentially deposited on the resultant structure including a mark block. The upper electrode and the dielectric film are patterned by using a mask(31), wherein the mask is provided with a clear box(35) for removing the upper electrode and the dielectric film of the mark block.