发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To restrict an etching on the bottom of a semiconductor wafer when manufacturing a semiconductor device. SOLUTION: When manufacturing the semiconductor device, another main surface (5) of a semiconductor wafer (1) is opposed to one main surface (6) of a reinforcing plate (2) at a specific space, and the reinforcing plate (2) and the semiconductor wafer (1) are sequentially overlapped on a hot plate (9) and come into contact with adhesives (7, 8). The reinforcing plate (2) and the semiconductor wafer (1) are held on the hot plate (9), while a pair of adhesives (7, 8) are heated, so that the adhesives (7, 8) are fused to an integrated adhesive layer (13). The viscosity of the adhesives (7, 8) is naturally lowered by heating to form an adhesive layer (13). Therefore, there scarcely exist any bubbles which are involved into the inside in the adhesive layer (13) from an interface of the pair of adhesives (7, 8). Thereafter, one main surface (4) provided with a plurality of etching masks (3) is exposed to dip the semiconductor wafer (1) in an etchant, and the semiconductor wafer (1) is divided into a plurality of semiconductor devices (14). COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004289056(A) 申请公布日期 2004.10.14
申请号 JP20030082092 申请日期 2003.03.25
申请人 SANKEN ELECTRIC CO LTD 发明人 OSHIMA TAKESHI;SUZUKI MASAYUKI
分类号 H01L21/306;H01L21/301;(IPC1-7):H01L21/301 主分类号 H01L21/306
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