| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of reading a ferroelectric memory device in which low voltage operations are conducted in a more reliable manner compared with a conventional device and to provide a ferroelectric memory device. SOLUTION: Having applied pulse-shaped cell plate signals CP to a cell plate electrode, the potentials of bit lines BLO and /BLO are respectively set to logic voltages "H" and "L" by sense amplifiers. In other words, electric field is temporarily applied to a ferroelectric capacitor for a cell plate electrode and then application of signals is controlled so that the electric field is not applied, and then the potentials of the bit lines are amplified by the sense amplifiers. In the ferroelectric memory device and the data read and rewrite method of the device, low voltage operations are conducted in a more reliable manner than in the conventional device to make the ferroelectric substance memory device more useful. COPYRIGHT: (C)2005,JPO&NCIPI
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