发明名称 |
Methods for forming polycrystalline silicon layer and fabricating polycrystalline silicon thin film transistor |
摘要 |
A method of forming a polycrystalline silicon layer includes: forming an amorphous silicon layer on a substrate; depositing a catalyst metal on the amorphous silicon layer; disposing first and second electrodes contacting the amorphous silicon layer along a first direction; heating the amorphous silicon layer under a first temperature and simultaneously applying a first voltage to the first and second electrodes to form a first crystallized amorphous silicon layer; disposing third and fourth electrodes contacting the first crystallized amorphous silicon layer along a second direction, the second direction being different from the first direction; and heating the first crystallized amorphous silicon layer under a second temperature and simultaneously applying a second voltage to the third and fourth electrodes to form a secondly crystallized amorphous silicon layer.
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申请公布号 |
US2004203218(A1) |
申请公布日期 |
2004.10.14 |
申请号 |
US20030465786 |
申请日期 |
2003.06.20 |
申请人 |
KIM BINN;KIM HAE-YEOL;BAE JONG-UK |
发明人 |
KIM BINN;KIM HAE-YEOL;BAE JONG-UK |
分类号 |
C30B1/02;H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L21/00;C30B1/00;H01L21/331;H01L21/84 |
主分类号 |
C30B1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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