| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device which can individually form the element part and polycrystal silicon film required by using an identical ion implantation process, and can make the process commonly usable even when impurity concentrations of the element part and the polycrystal silicon film are mutually different. SOLUTION: The semiconductor device 101 comprises a semiconductor element which is formed by ion implantation of impurity into a semiconductor substrate 1, and a polycrystal silicon film 30 formed over an insulating film 2 provided to the semiconductor substrate 1 to which impurity ion is implanted. The method of manufacturing this semiconductor device includes a mask forming process to form the mask 9 including an aperture 90r formed of a repeated pattern over the polycrystal silicon 30, an ion implantation process to implant impurity ion to the polycrystal silicon film 30 in which the mask 9 is formed simultaneously with the ion implantation in the semiconductor element using the ion implantation condition in the semiconductor element, and a heat treatment process for heating the semiconductor substrate 1 which has completed the ion implantation. COPYRIGHT: (C)2005,JPO&NCIPI
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