| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the heat resistance of a phase change memory so as to be operational above 130 °C in the phase memory composed of a memory cell using a memory element and a selective transistor. <P>SOLUTION: A recording layer in which amounts of doping of Zn of Zn-Ge-Te and Cd or the like is ≥25 % by atom, an amount of doping of Ge is ≥5 % by atom and ≤25 % by atom, and an amount of doping of Te is ≥40 % by atom is used. It is possible to realize a memory for use in applications such as that on a vehicle where temperature becomes higher. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
