| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a treatment apparatus capable of performing high-speed gas replacement by reducing the influence of gas accumulated in a projecting space extending projecting from the inner space of a treatment container. <P>SOLUTION: The treatment container 2 defines the internal space in which a semiconductor wafer W is arranged. A gas supplying apparatus 8 alternately supplies a plurality of kinds of material gas by each kind. The inner space of the treatment container 2 comprises a treatment space S in which the semiconductor wafer W is arranged and a gate space G extending between the treatment space S and a gate valve 16 in a view from outside. The gate space G being the projecting space is segregated from the treatment space S by a vertically movable shutter 30. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
