发明名称 DRY ETCHING METHOD
摘要 PROBLEM TO BE SOLVED: To solve the problem of prior art that a large quantity of reaction products having firm chemical bonding strength adhere to a substrate to be treated when dry-etching a refractory metal. SOLUTION: After effecting desired etching using a process gas in a dry etching treatment, the process gas is replaced with a non-process gas while maintaining electric discharge, so that the reaction products are discharged in the gaseous state. Thus, the reaction products are prevented from adhering to the substrate to be treated. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004288863(A) 申请公布日期 2004.10.14
申请号 JP20030078753 申请日期 2003.03.20
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YAMAGUCHI NAOSHI;YANAGI YOSHIHIRO;MORITA MASAFUMI
分类号 C23F4/00;H01L21/3065;(IPC1-7):H01L21/306 主分类号 C23F4/00
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