| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element with high reliability and its manufacturing method wherein Joule heat generated in a ridge part is reduced. SOLUTION: At least, a first conductivity type clad layer 4, an active layer 5, a second conductivity type clad layer 6 of primary, a ridge and a pair of current blocking layers 13, 13, and a third second conductivity type clad layer 11 are stacked one by one on a first conductivity type substrate 2. A pair of the current blocking layers 13, 13 pinch the ridge 10. A thin second conductivity type AlAs layer 12 is formed between the second conductivity type clad layer 6 of primary and the ridge 10 and the third second conductivity type clad layer 11. The AlAs layer 12 of a part corresponding to the first clad layer 6 is composed of oxidized insulated oxide. A pair of the current blocking layers 13, 13 are formed by oxidizing the second conductivity type AlAs layer until reaching the side surface of the ridge 100. COPYRIGHT: (C)2005,JPO&NCIPI
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