| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a high quality level in which the deterioration of transistor characteristics due to a gate insulating film and an increase of any interface layer are suppressed, and to provide a method for manufacturing the same. SOLUTION: The interface layer 5, a diffusion suppressing layer 6 and a high dielectric constant insulating film 7 are sequentially formed in this order on one surface 2a of a silicon substrate 2. COPYRIGHT: (C)2005,JPO&NCIPI
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| 申请公布号 |
JP2004288885(A) |
申请公布日期 |
2004.10.14 |
| 申请号 |
JP20030079290 |
申请日期 |
2003.03.24 |
| 申请人 |
HORIBA LTD;ROHM CO LTD;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY;RENESAS TECHNOLOGY CORP |
发明人 |
TOMINAGA KOJI;IWAMOTO KUNIHIKO;YASUDA TETSUJI;NAMATAME TOSHIHIDE |
| 分类号 |
H01L21/318;H01L21/02;H01L21/28;H01L21/314;H01L21/316;H01L29/51;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/318 |
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