| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device that can be controlled easily by a simple method by suppressing a harmful influence exerted by ashing by using an inorganic film having a low dielectric constant as an etching stopper film, and to provide a method of manufacturing the device. SOLUTION: A second insulating film 104, a third insulating film 105 which is the inorganic film having an Si-H coupling and the low dielectric constant, and a fourth insulating film 106 are successively laminated on a laminate 100 having a first insulating film 102 formed on a semiconductor substrate 101 and lower-layer wiring 103 formed on the insulating film 102. Then, auxiliary holes 109 for assisting the formation of wiring grooves/connection holes are formed in the fourth insulating film 106 by selectively etching the film 106 by using the third insulating film 105 as the etching stopper film. Thereafter, wiring grooves 110 are formed in the fourth insulating film 106, and the connection holes 111 are formed between the wiring grooves 110 and lower-layer wiring 103 by selectively etching the fourth insulating film 106. COPYRIGHT: (C)2005,JPO&NCIPI
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