发明名称 |
Method for controlling a process for fabricating integrated devices |
摘要 |
A method for controlling a process for fabricating integrated devices on a substrate. The method includes ex-situ and in-situ measurements of pre-etch and post-etch dimensions for structures formed on the substrate and uses the results of the measurements to adjust process recipes and to control the operational status of etch and external substrate processing equipment. In one exemplary application, the method is used during a multi-pass process for fabricating a capacitive structure of a trench capacitor.
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申请公布号 |
US2004200574(A1) |
申请公布日期 |
2004.10.14 |
申请号 |
US20040805136 |
申请日期 |
2004.03.19 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
DAVIS MATTHEW F.;LIAN LEI;SCHMIDT BARBARA |
分类号 |
G05B19/418;H01L21/3065;H01L21/66;(IPC1-7):H01L21/66;G01R31/26;C23F1/00;H01L21/306 |
主分类号 |
G05B19/418 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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