| 摘要 |
PROBLEM TO BE SOLVED: To manufacture single crystals in the whole compositional range of Ge<SB>x</SB>Si<SB>1-x</SB>(0<x<1) by preventing sticking of a gaseous silicon oxide on a seed crystal. SOLUTION: A crucible C used in an apparatus for manufacturing the single crystal by a rotary pulling method is integrally formed together with a vessel 2 for melting a raw material, which vessel is integrally formed using silicon nitride as the material. The sticking of a silicon oxide film to the seed crystal 9 is avoided by using the crucible C for manufacturing the GeSi single crystal. Further, a good quality GeSi single crystal can be obtained by using the crucible C because the formation of cracks or peeling in the silicon nitride film is suppressed while cracks or peeling are formed in the case of the silicon nitride film applied on a quartz crucible. COPYRIGHT: (C)2005,JPO&NCIPI
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