| 摘要 |
PURPOSE:To grown an AlGaN mixed crystal film with high controllability by using TiBA and TMC of organic metals as group III gas and NH4 as group V material in a vapor growing step. CONSTITUTION:A gallium nitride compound semiconductor (AlxGa1-xN: including X=0) film is crystal grown by an organic metal compound vapor growing method. In a vapor growing step of this case, tri-isobutyl aluminum (TiBA) and trimethyl gallium (TMG) of organic metals are group III materials and ammonia as group V material are used. For example, a buffer layer 2 made of AlN is formed on a sapphire board using a sapphire (a) surface, and an AlxGa1-xN mixed crystal film 3 of a gallium nitride compound semiconductor film is formed thereon. As a growing apparatus, a small-sized MOVPE apparatus is sued, and in a vapor growing step, TiBA and TMG instead of TMA as group III material gas and NH4 as group V material gas are used. |
