GALLIUM NITRIDE-BASED SEMICONDUCTOR LED DEVICE TO MAXIMIZE QUANTUM EFFICIENCY

摘要

PURPOSE: A gallium nitride-based semiconductor LED(light emitting diode) device is provided to remarkably improve outer quantum efficiency by forming a transparent thin film of an unevenness type like a silicon oxide layer in a position adjacent to a sapphire substrate used as an LED substrate and by depositing metal with good light reflectivity to be in contact with the uneven surface of the thin film. CONSTITUTION: The transparent thin film(28) formed of the silicon oxide layer of an unevenness type is formed on the rear surface of the sapphire substrate(10) located in the lowermost layer of the semiconductor LED device. A metal layer with good reflectivity is deposited to be in contact with the lower surface of the transparent thin film of the unevenness type.