| 摘要 |
<p>PROBLEM TO BE SOLVED: To easily determine the precise optimum size of an auxiliary pattern. SOLUTION: In the mask pattern designing method which uses a light source with exposure wavelength &lambda and designs the pattern of a photomask used to transfer a design pattern 1 with line width W" onto a wafer by a projection exposure device including a projection lens with a numerical aperture NA, the auxiliary pattern 4 generates for variation by sa'=sa&mu &lambda /NA from the tip of a main pattern 3 corresponding as the mask pattern 2 to the design pattern 1 by conversion on the wafer is added to the main pattern 3 on a basis of standardized line breadthwise size value sa and a standardized line lengthwise size value sb predetermined so that a pattern tip position after transfer is finished as desired corresponding to standardized line width W=W'/(&lambda /NA) standardized with the exposure wavelength &lambda and numerical aperture NA, where W' is the line width of the main pattern 3 by on-wafer conversion.</p> |
