发明名称 Capacitance sensing method of reading a ferroelectric RAM
摘要 A capacitance sensing method of reading a FeRAM (Ferroelectric Random Access Memory). First, enable the word line for turning on the first and the second switches. Then, enable the latch sense amplifier for changing the voltages of the bit line and the inverse bit line according to the first and the second ferroelectric capacitors. Then, output the data stored in the FeRAM according to the voltage difference between the bit line and the inverse bit line.
申请公布号 US6804140(B2) 申请公布日期 2004.10.12
申请号 US20030412358 申请日期 2003.04.11
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 LIN CHIN-HSI;WENG CHI-MING
分类号 G11C11/22;(IPC1-7):G11C11/22 主分类号 G11C11/22
代理机构 代理人
主权项
地址