发明名称 Semiconductor light-emitting element
摘要 Part of light emitted downward by an active layer is reflected by an electrode functioning as a reflective layer, and travels upward to radiate outside. Since the electrode is made of a metal, it reflects almost all light regardless of its incident angle, and light can be efficiently extracted.
申请公布号 US6803603(B1) 申请公布日期 2004.10.12
申请号 US20000603118 申请日期 2000.06.22
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NITTA KOICHI;OKAZAKI HARUHIKO;WATANABE YUKIO;FURUKAWA CHISATO
分类号 G02B6/122;H01L33/10;H01L33/12;H01L33/20;H01L33/22;H01L33/40;(IPC1-7):H01L27/15 主分类号 G02B6/122
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