| 发明名称 |
MRAM configuration having selection transistors with a large channel width |
| 摘要 |
The invention relates to an MRAM configuration that includes a selection transistor connected to several MTJ memory cells. The selection transistor has an increased channel width.
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| 申请公布号 |
US6803618(B2) |
申请公布日期 |
2004.10.12 |
| 申请号 |
US20030436723 |
申请日期 |
2003.05.13 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
HOENIGSCHMID HEINZ;BOEHM THOMAS;ROEHR THOMAS |
| 分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):H01L29/76 |
主分类号 |
G11C11/15 |
| 代理机构 |
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| 主权项 |
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