发明名称 |
Enhanced process and profile simulator algorithms |
摘要 |
A method enhances a process and profile simulator algorithm to predict the surface profile that a given plasma process will create. The method first tracks an energetic particle and then records the ion fluxes produced by the energetic particle. A local etch rate and a local deposition rate are computed from neutral fluxes, surface chemical coverage, and surface material type that are solved simultaneously.
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申请公布号 |
US6804572(B1) |
申请公布日期 |
2004.10.12 |
申请号 |
US20000609593 |
申请日期 |
2000.06.30 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
COOPERBERG DAVID;VAHEDI VAHID |
分类号 |
C23C14/54;C23C16/52;H01J37/32;(IPC1-7):G05B13/02;H01L21/00 |
主分类号 |
C23C14/54 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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