发明名称 |
Magnetic memory element having controlled nucleation site in data layer |
摘要 |
A ferromagnetic data layer of a magnetic memory element is formed with a controlled nucleation site. The controlled nucleation sites improve the switching distribution of the magnetic memory elements, which increases reliability of writing to the magnetic memory elements. A Magnetic Random Access Memory (MRAM) device may include an array of such magnetic memory elements.
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申请公布号 |
US6803616(B2) |
申请公布日期 |
2004.10.12 |
申请号 |
US20020173195 |
申请日期 |
2002.06.17 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
NICKEL JANICE H.;BHATTACHARYYA MANOJ |
分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):H01L29/76 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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