发明名称 |
CRYSTALLIZATION METHOD USING LASER IRRADIATION TO OBTAIN SINGLE CRYSTALLINE LAYER OF DESIRED SIZE |
摘要 |
PURPOSE: A crystallization method is provided to obtain a single crystalline layer of a desired size at a desired position from an amorphous layer or a polycrystalline layer by using a laser irradiation method. CONSTITUTION: A laser beam(630) of a particular pattern is irradiated on a substrate of a predetermined size by using a mask. The first crystallization process is performed to crystallize the irradiated part of the substrate. The first scan process is performed to grow grains within the first crystalline part of the substrate. A polycrystalline island region(610) is formed by completing the first scan process. The second scan process is performed to form the grains as a single crystalline region by using the grains as seeds. The single crystalline region is extended by irradiating the laser beam.
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申请公布号 |
KR20040085310(A) |
申请公布日期 |
2004.10.08 |
申请号 |
KR20030019953 |
申请日期 |
2003.03.31 |
申请人 |
BOE HYDIS TECHNOLOGY CO., LTD. |
发明人 |
KIM, EOK SU;LEE, HO NYEON;PARK, JAE CHEOL;RYU, MYEONG GWAN |
分类号 |
H01L21/428;C30B13/00;H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L21/428 |
主分类号 |
H01L21/428 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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