发明名称 TUNGSTEN POLISHING SOLUTION
摘要 A metal polishing slurry having a static etch inhibitor and method for polishing a substrate while inhibiting static etching during the polishing of a substrate. The slurry composition includes an iodate-free halogenated inhibiting compound added to a generic slurry to form a resultant slurry. The substrate is polished using the resultant slurry, which inhibits the static etching of the substrate being polished. Also provided is a metal polishing slurry for inhibiting static etch comprising an oxidizer, a complexing agent, and an iodate-free halogenated inhibiting compound.
申请公布号 KR20040086290(A) 申请公布日期 2004.10.08
申请号 KR20047011428 申请日期 2003.01.24
申请人 发明人
分类号 B24B37/00;C09K3/14;C09G1/02;C23F3/00;H01L21/304;H01L21/306;H01L21/321 主分类号 B24B37/00
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