PROCESS GAS SUPPLY DEVICE AND PROCESS GAS SUPPLY SYSTEM OF SEMICONDUCTOR FABRICATION EQUIPMENT USING RF POWER AND METHOD FOR THE SAME

摘要

PURPOSE: A process gas supply device and a process gas supply system of semiconductor fabrication equipment using RF power and a method for the same are provided to improve the uniformity by increasing the supply amount of process gas to an outside of a wafer in comparison to a center of the wafer. CONSTITUTION: A process gas supply device is used for supplying a process gas from plural nozzles(32) installed at an upper part of a chamber to a wafer. The supply amount of the process gas provided to an outside of a wafer is larger than the supply amount of the process gas provided to a center of the wafer by controlling each aligning state of the nozzles. The density of the nozzles directed to the outside of the wafer is higher than the density of the nozzles directed to the center of the wafer.