SENSE AMPLIFIER SYSTEMS AND A MATRIX-ADDRESSABLE MEMORY DEVICE PROVIDED THEREWITH

摘要

A sense amplifier system for sensing the charge of a charge-~storing means (601) comprises a first and second charge reference means (600a, 600b) connected in parallel and similar to the charge-storing means (601) and havi ng respectively opposite polarization. The charge reference means (600a, 600b) and the charge-storing means (601) have a common input node (WL), and first and second pseudo-differential reference sense amplifiers (RSA1, RSA2) are connected with output nodes (RBL1, RBL2) of the charge reference means (600a , 600b) for generating reference signals to a common reference node (CHREF) connected with a pseudo-differential sense amplifier (SA). The pseudo- differential sense amplifier (SA) has a second input for receiving an output signal from the charge-storing means (601) and generates an output signal indicative of a polarization state of the charge-storing means. Another embodiment adapted for sensing the charges of a plurality of charge-storing means (701) and comprising at least two pairs of charge reference means is also described. A non-volatile matrix-addressable memory system comprising a n electrical polarizable dielectric memory material exhibiting hysterisis and a sense amplifier system as described is also claimed.