| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor element in which the contact resistance between the electrode and semiconductor layer is small even when the element is driven by feeding a large current and, in addition, which is extremely excellent in adhesion and mechanical strength, and to provide a method of manufacturing the element. <P>SOLUTION: The nitride semiconductor element has a multilayered constitution provided with a first metal layer M1 and at least a second metal layer M2 composed of a material which is different from that of the first metal layer M1 on a laminated semiconductor layer Q. The first metal layer M1 is composed of a metal material which is brought into ohmic contact with the semiconductor layer Q. The second metal layer M2 is the uppermost layer of the electrode and composed of a metal material having a capping action. In addition, the first and second metallic layers M1 and M2 are composed of elements of the platinum group. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
