| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing method and apparatus which are capable of subjecting only a very fine region to plasma processing. <P>SOLUTION: A plasma source is equipped with an outer gas exhaust nozzle 6, an inner gas exhaust nozzle 8, and an electrode 14, the plasma source is arranged near to a thin plate 17, a pulse voltage is applied to the electrode 14 as helium and sulfur hexafluoride are fed through the inner gas exhaust nozzle 8 and the outer gas exhaust nozzle 6, respectively, whereby a very fine linear region of the silicon thin plate 17 is subjected to etching. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
