| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device having a high readout speed. <P>SOLUTION: The device includes a memory cell array 2; a pre-charge circuit 1 that pre-charges each bit line of the memory cell array 2 to predetermined voltage; a memory cell array 12; a pre-charge circuit 11 that pre-charges each bit line of the memory cell array 12 to predetermined voltage; and a sense amplifier 21 that compares output voltage of each bit line of the memory cell array 2, which is selected for reading data, with output voltage of each bit line of the memory cell array 12, which is selected for reference. A pre-charge voltage value (for example, 1V) of the pre-charge circuit 1 is different from a pre-charge voltage value (for example, 0.5V) of the pre-charge circuit 11. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
