| 发明名称 |
Phase-change memory devices and methods for forming the same |
| 摘要 |
Phase-change memory devices include a phase-change material layer and a first electrode having a contact area therebetween. The contact area extends into a recess of the first electrode to provide current density concentration.
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| 申请公布号 |
US2004195604(A1) |
申请公布日期 |
2004.10.07 |
| 申请号 |
US20040814670 |
申请日期 |
2004.03.31 |
| 申请人 |
HWANG YOUNG-NAM;KIM YOUNG-TAE |
发明人 |
HWANG YOUNG-NAM;KIM YOUNG-TAE |
| 分类号 |
H01L27/10;H01L21/00;H01L27/24;H01L45/00;(IPC1-7):H01L21/00 |
主分类号 |
H01L27/10 |
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