| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode having a dual dopant contact layer. <P>SOLUTION: The light emitting diode includes a substrate, a light emitting stacked structure formed on the substrate, a dual dopant contact layer formed on the light emitting stacked structure, and a transparent conducting oxide layer formed on the dual dopant contact layer. After fabricated, the dual dopant contact layer includes a plurality of p-type and n-type dopants. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
