SEMICONDUCTOR DEVICE WITH LIGHTLY DOPED DRAIN AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device with the lightly doped drain, and to provide a method for manufacturing it. SOLUTION: A gate dielectric layer 112 and a conductive layer 114 are continuously formed on a semiconductor substrate. Then the conductive layer 114 is selectively removed, and a first gate electrode 118 is formed on the gate dielectric layer 112 corresponding to a first are 110, and a portion of remains of the conductive layer substantially overlies a second area 120. Then a first impurity of first conductive type is doped in the first area. A spacer 126 is formed on a sidewall of the first gate electrode. A second impurity of first conductive type is doped in the first area 110 to form a thin film transistor of first conductive type. A patterned mask layer defining a second gate electrode of the conductive layer corresponding to the second area is formed over the semiconductor substrate. A portion of the conductive layer is removed to form the second gate electrode on the gate dielectric layer corresponding to the second area. Then, an impurity of second conductive type is doped in the second area to form a thin film transistor of second conductive type. COPYRIGHT: (C)2005,JPO&NCIPI