| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a photon absorption film and its manufacturing method. SOLUTION: A MOS transistor is formed on a semiconductor substrate 100, and the photon absorption film 145 is formed to cover the MOS transistor and the semiconductor substrate. Also, an interlayer insulating film 150 is formed on the upper part of the photon absorption film by a HDP system. At this time, a silicon film, a silicon germanium film or a laminated film of the silicon film and the silicon germanium film can be utilized as the photon absorption film. According to this invention, a photon created in a plasma process is absorbed to prevent the occurrence of a leakage current of a gate insulating film. COPYRIGHT: (C)2005,JPO&NCIPI |
