| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device for realizing "Write before Sense operation" by an I/O common type circuit construction. SOLUTION: An interface gate circuit 54 comprises N-channel MOS transistors N8, N10 serially connected across a bit line BL and a global IO line GIO, and N-channel MOS transistors N12, N14 serially connected across a bit line /BL and a global IO line /GIO. The N-channel MOS transistors N8, N12 receive a sense amplifier activation signal S0 for activating the sense amplifier 52 to the gate, and the N-channel MOS transistors N10, N14 receive a column selection signal CSL to the gate. COPYRIGHT: (C)2005,JPO&NCIPI
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