发明名称 |
Divot reduction in SIMOX layers |
摘要 |
A method of fabricating a silicon-on-insulator (SOI) having a superficial Si-containing layer that has a reduced number of tile and divot defects is provided. The method includes the steps of: implanting oxygen ions into a surface of a Si-containing substrate, the implanted oxygen ions having a concentration sufficient to form a buried oxide region during a subsequent annealing step; and annealing the substrate containing implanted oxygen ions under conditions wherein the implanted oxygen ions form a buried oxide region which electrically isolates a superficial Si-containing layer from a bottom Si-containing layer. Moreover, the annealing conditions employed are capable of reducing the number of tile or divot defects present in the superficial Si-containing layer so as to allow optical detection of any other defect that has a lower density than the tile or divot defect. The present invention also relates to the SOI substrate that is produced using the inventive method.
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申请公布号 |
US2004197940(A1) |
申请公布日期 |
2004.10.07 |
申请号 |
US20040832215 |
申请日期 |
2004.04.26 |
申请人 |
INTERNATIOAL BUSINESS MACHINES |
发明人 |
FOX STEPHEN R;GARG NEENA;GIEWONT KENNETH J;LEE JUNEDONG;SADANA DEVENDRA K |
分类号 |
H01L21/762;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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