Method of manufacturing ferroelectric substance thin film and ferroelectric memory using the ferroelectric substance thin film

摘要

The invention provides a ferroelectric substance thin film uniform and good in crystallinity. The ferroelectric substance thin film is characterized by forming a seed layer including ultra-fine particle powder including composing element of a ferroelectric substance thin film on a surface of a substrate constructing the substrate before forming the ferroelectric substance thin film and forming the ferroelectric substance thin film on an upper layer of the seed layer so as to perform crystallization making the seed layer a nucleus.