| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a chemically amplified resist composition suitable for an exposure light source at ≤160 nm, in particular, F<SB>2</SB>excimer laser light (157 nm) is used, and specifically, to provide a chemically amplified resist composition having excellent sensitivity when a light source at 157 nm is used, and has a low possibility of being converted to negative type, that is, leaves little film residue. <P>SOLUTION: The chemically amplified resist composition contains: (A) a resin which contains a fluorine atom and is decomposed by the effect of an acid to increase the solubility in an alkali developing solution; and (B) a compound which generates an acid by irradiation of active rays or radiation and which satisfies the relation of -1.5<E<SB>pc</SB><-0.5, wherein E<SB>pc</SB>[V] is the half wave of the reduction potential. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
