| 摘要 |
PROBLEM TO BE SOLVED: To easily and inexpensively provide an SOI wafer whose electric reliability is high in a device manufacturing process by making excellent electric characteristics without generating a fine pit by carrying out fluorinated acid cleaning or the like even when an extremely thin silicon active layer is formed, or maintaining high insulating performance even when an extremely thin inter-layer insulating film is formed. SOLUTION: In this SOI wafer where at least a silicon active layer is formed on a supporting substrate through an insulating film or directly, at least the silicon active layer is constituted of the P(phosphorous) dope silicon single crystal of an N area and/or non-defective area grown by a Czochralski method, and the concentration of Al(aluminum) is set so as to be 2×10<SP>12</SP>atoms/cc or more. COPYRIGHT: (C)2005,JPO&NCIPI
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