发明名称 SIGNAL TRANSMITTING CIRCUIT AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To protect a circuit element from electrostatic breakdown and, at the same time, to transmit high-speed signals in a semiconductor circuit. SOLUTION: The semiconductor circuit contains an input terminal 50, a protective circuit 56 which discharges a voltage of a prescribed value or higher when the voltage is impressed, and a cell 10 containing the circuit element. The protective circuit 56 and cell 10 are connected to the input terminal 50 in branched states. On wiring 18c connected with the cell 10, a resistor R<SB>2</SB>is disposed so that the resistance value of the wiring 18c may become higher than that of the wiring 18b connected with the protective circuit 56. In addition, a section 54 to be cut is formed on the wiring 18b. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004281705(A) 申请公布日期 2004.10.07
申请号 JP20030070812 申请日期 2003.03.14
申请人 SANYO ELECTRIC CO LTD 发明人 USUI RYOSUKE;ODA SHINKO;MIZUHARA HIDEKI
分类号 H01L27/04;H01L21/82;H01L21/822;(IPC1-7):H01L21/822 主分类号 H01L27/04
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