发明名称 |
METHOD OF FORMING THIN FILM |
摘要 |
<p>A method of forming a thin film of a vinylidene fluoride homopolymer having an I-form crystal structure, the method being usable for forming the film on various substrates in a relatively easy manner (coating conditions, procedure, etc.); a process for efficiently producing a high-purity vinylidene fluoride homopolymer having an I-form crystal structure; and a novel vinylidene fluoride homopolymer which can give a thin film having excellent ferroelectric characteristics. The method for thin vinylidene fluoride homopolymer film formation comprises (i) a step in which vinylidene fluoride is polymerized by free-radical polymerization in the presence of a C1-20 iodine or bromine compound having at least one moiety represented by -CRf<1>Rf<2>X<1> (wherein X<1> is iodine or bromine; and Rf<1> and Rf<2> are the same or different and each is one selected among fluorine and C1-5 perfluoroalkyls) to produce a raw powder of a vinylidene fluoride homopolymer consisting of the I-form crystal structure alone or comprising the structure as the main component and (ii) a step in which a vinylidene fluoride homopolymer which consists of the I-form crystal structure alone or comprises the structure as the main component and which is obtained from the raw powder of a vinylidene fluoride homopolymer consisting of the I-form crystal structure alone or comprising the structure as the main component is used to form a thin film on a substrate surface.</p> |
申请公布号 |
WO2004085498(A1) |
申请公布日期 |
2004.10.07 |
申请号 |
WO2004JP04028 |
申请日期 |
2004.03.24 |
申请人 |
DAIKIN INDUSTRIES LTD.;ARAKI, TAKAYUKI;KODANI, TETSUHIRO |
发明人 |
ARAKI, TAKAYUKI;KODANI, TETSUHIRO |
分类号 |
B05D7/24;B32B27/30;C08F2/38;C08F14/22;C08F114/22;C09D127/16;C23C14/12;(IPC1-7):C08F114/22 |
主分类号 |
B05D7/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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