发明名称 METHOD OF FORMING THIN FILM
摘要 <p>A method of forming a thin film of a vinylidene fluoride homopolymer having an I-form crystal structure, the method being usable for forming the film on various substrates in a relatively easy manner (coating conditions, procedure, etc.); a process for efficiently producing a high-purity vinylidene fluoride homopolymer having an I-form crystal structure; and a novel vinylidene fluoride homopolymer which can give a thin film having excellent ferroelectric characteristics. The method for thin vinylidene fluoride homopolymer film formation comprises (i) a step in which vinylidene fluoride is polymerized by free-radical polymerization in the presence of a C1-20 iodine or bromine compound having at least one moiety represented by -CRf<1>Rf<2>X<1> (wherein X<1> is iodine or bromine; and Rf<1> and Rf<2> are the same or different and each is one selected among fluorine and C1-5 perfluoroalkyls) to produce a raw powder of a vinylidene fluoride homopolymer consisting of the I-form crystal structure alone or comprising the structure as the main component and (ii) a step in which a vinylidene fluoride homopolymer which consists of the I-form crystal structure alone or comprises the structure as the main component and which is obtained from the raw powder of a vinylidene fluoride homopolymer consisting of the I-form crystal structure alone or comprising the structure as the main component is used to form a thin film on a substrate surface.</p>
申请公布号 WO2004085498(A1) 申请公布日期 2004.10.07
申请号 WO2004JP04028 申请日期 2004.03.24
申请人 DAIKIN INDUSTRIES LTD.;ARAKI, TAKAYUKI;KODANI, TETSUHIRO 发明人 ARAKI, TAKAYUKI;KODANI, TETSUHIRO
分类号 B05D7/24;B32B27/30;C08F2/38;C08F14/22;C08F114/22;C09D127/16;C23C14/12;(IPC1-7):C08F114/22 主分类号 B05D7/24
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